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2N7 Series Mosfet N-Channel Enhancement Mode Field Effect Transistor
Application:
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. These products have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching performance. They can be used in most applications
requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small servo motor control, power MOSFET
gate drivers, and other switching applications.
Mfr Part#: 2N7000
Packaging: TO-226- 3, TO-92-3 - Additional Information
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Additional Information
Manufacturer Name Fairchild Category Transistors Mosfets Series 2N7 Channel Type N-Channel Drain-to-Source Vdss: 60 V Current Cont-us Drain Id: 200 mA Drain-Source On Res.-Max 5 Ω Gate Threshold Volt. Vgs: 3 V Gate-Source Volt. Vgss: ±20 V Qg Gate Charge No Input Capacitance (Ciss) 50 pF Operating Temperature -55°C to +150°C Rated Power Dissipation 400 mW R1, R2 No Frequency No Mounting Type Trough Hole Package Style Truncated Cylinder Package / Case TO-92-3, To-226-3 - Reviews