Filter

Category

1. Bipolar Transistors (1)
2. Mosfets (2)

Category Transistors

1. Mosfets (2)
2. Digital (1)

Polarity

1. NPN (1)

Channel Type

1. N-Channel (2)

CE Voltage-Max

1. 50 V (1)

Collector Current @ 100C

1. 100 mA (1)

DC Current Gain-Min

1. 56 (1)

Drain-to-Source Vdss:

1. 60 V (1)
2. 75 V (1)

Drain-Source On Res.-Max

1. 107 mΩ (1)
2. 4.5 mΩ (1)

Qg Gate Charge

1. 11.3 nC (1)
2. 138 nC (1)

Rated Power Dissipation

1. 310 W (1)
2. 38 W (1)

Gate-Source Volt. Vgss:

1. ±16 V (1)
2. ±20 V (1)

Frequency

1. 250 Mhz (1)

Current Collect. Cutoff max

1. 500 nA (1)

Vce Saturation (max):

1. 300 mV (1)

Current Cont-us Drain Id:

1. 11 A (1)
2. 90 A (1)

Gate Threshold Volt. Vgs:

1. 3 V (1)
2. 4 V (1)

Input Capacitance (Ciss)

1. 350 pF (1)
2. 6600 pF (1)

Series

1. DTC144W (1)
2. FDB (1)
3. RFD (1)

Manufacturer Name

1. Fairchild (1)
2. Infineon Technologies (1)
3. ROHM Semiconductor (1)

Number of Elements

1. 1 (1)

Operating Temperature

1. -55°C to +150°C (1)
2. -55°C to +175°C (2)

Power Dissipation-Tot

1. 200 mW (1)

Package / Case

1. SMT3, TO-236-3, SC-59, SOT-23-3 (1)
2. TO-252-3, TO-252AA, SC-63 (1)
3. TO-263-3, D²Pak, TO-263AB (1)

Package Style

1. - (1)
2. Flange (2)