Filter

Category Transistors

1. Mosfets (7)

Channel Type

1. P-Channel (1)
2. N-Channel (6)

Drain-to-Source Vdss:

1. 100 V (1)
2. 55 V (1)
3. 60 V (2)
4. 600 V (1)
5. 650 V (1)
6. 75 V (1)

Drain-Source On Res.-Max

1. 10 mΩ (1)
2. 107 mΩ (1)
3. 200 mΩ (1)
4. 4.5 mΩ (1)
5. 480 mΩ (2)
6. 5 Ω (1)

Qg Gate Charge

1. 11.3 nC (1)
2. 138 nC (1)
3. 4.6 nC (1)
4. 60 nC (1)
5. 61 nC (1)
6. 98 nC (1)

Rated Power Dissipation

1. 150 W (1)
2. 170 W (1)
3. 310 W (1)
4. 33 W (1)
5. 38 W (1)
6. 400 mW (1)
7. 85 W (1)

Gate-Source Volt. Vgss:

1. ±16 V (1)
2. ±20 V (4)
3. ±25 V (2)

Current Cont-us Drain Id:

1. 11 A (2)
2. 19 A (1)
3. 200 mA (1)
4. 89 A (1)
5. 9 A (1)
6. 90 A (1)

Gate Threshold Volt. Vgs:

1. 2 V (1)
2. 3 V (2)
3. 4 V (2)
4. 5 V (2)

Input Capacitance (Ciss)

1. 1400 pF (1)
2. 350 pF (1)
3. 3600 pF (1)
4. 50 pF (1)
5. 644 pF (2)
6. 6600 pF (1)

Series

1. 2N7 (1)
2. FDB (1)
3. IRF95 (1)
4. IRL37 (1)
5. P11N (2)
6. RFD (1)

Manufacturer Name

1. Fairchild (2)
2. Infineon Technologies (2)
3. International Reactifier (1)
4. STMicroelectronics (1)
5. Vishay (1)

Operating Temperature

1. -55°C to +150°C (3)
2. -55°C to +175°C (4)

Package / Case

1. T-220-3, TO-220AB (3)
2. TO-220-3 Full Pack (1)
3. TO-252-3, TO-252AA, SC-63 (1)
4. TO-263-3, D²Pak, TO-263AB (1)
5. TO-92-3, To-226-3 (1)

Mounting Type

1. Trough Hole (5)
2. Surface Mount (2)

Package Style

1. Flange (6)
2. Truncated Cylinder (1)