Filter

Category

1. Bipolar Transistors (16)
2. Mosfets (2)

Category Transistors

1. Bipolar (16)
2. Mosfets (2)

Polarity

1. NPN (11)
2. PNP (5)

Channel Type

1. N-Channel (2)

CE Voltage-Max

1. 30 V (1)
2. 40 V (2)
3. 45 V (2)
4. 60 V (1)
5. 100 V (3)
6. 120 V (2)
7. 250 V (1)
8. 300 V (1)
9. 350 V (1)
10. 400 V (1)
11. 800 V (1)

Collector Current @ 100C

1. 100 mA (2)
2. 200 mA (2)
3. 50 mA (2)
4. 500 mA (1)
5. 800 mA (1)
6. 1 A (4)
7. 3 A (2)
8. 6 A (2)

DC Current Gain-Min

1. 10 (1)
2. 15 (3)
3. 20 (1)
4. 30 (3)
5. 100 (2)
6. 160 (1)
7. 200 (1)
8. 300 (4)

Drain-to-Source Vdss:

1. 60 V (1)
2. 75 V (1)

Drain-Source On Res.-Max

1. 4.5 mΩ (1)
2. 5 Ω (1)

Qg Gate Charge

1. 138 nC (1)

Rated Power Dissipation

1. 310 W (1)
2. 400 mW (1)

Gate-Source Volt. Vgss:

1. ±20 V (2)

Frequency

1. 10 Mhz (3)
2. 3 Mhz (4)
3. 50 Mhz (3)
4. 100 Mhz (4)
5. 250 Mhz (1)
6. 300 Mhz (1)

Current Collect. Cutoff max

1. 15 nA (1)
2. 100 nA (2)
3. 1 μA (2)
4. 10 μA (1)
5. 300 μA (2)
6. 700 μA (2)
7. 1 mA (3)

Vce Saturation (max):

1. 1 V (3)
2. 1.2 V (1)
3. 1.5 V (2)
4. 2 V (1)
5. 300 mV (3)
6. 400 mV (1)
7. 500 mV (2)
8. 600 mV (1)
9. 700 mV (2)

Current Cont-us Drain Id:

1. 200 mA (1)
2. 90 A (1)

Gate Threshold Volt. Vgs:

1. 3 V (1)
2. 4 V (1)

Input Capacitance (Ciss)

1. 50 pF (1)
2. 6600 pF (1)

Series

1. 2N3 (2)
2. 2N5 (1)
3. 2N7 (1)
4. BC (2)
5. FDB (1)
6. KSC (3)
7. MPSA (1)
8. TIP (7)

Operating Temperature

1. -55°C to +150°C (9)
2. -55°C to +175°C (1)
3. -65°C to +150°C (8)

Power Dissipation-Tot

1. 2 W (7)
2. 50 W (1)
3. 500 mW (3)
4. 625 mW (5)

Package / Case

1. T-220-3, TO-220AB (8)
2. TO-263-3, D²Pak, TO-263AB (1)
3. TO-92, Formed Leads (1)
4. TO-92-3, To-226-3 (8)

Mounting Type

1. Trough Hole (17)
2. Surface Mount (1)

Package Style

1. Flange (9)
2. Truncated Cylinder (9)